SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin TO-247 ROHM SCT3080KRC14

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

104 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Typical Gate Charge @ Vgs

60 nC @ 18V