N-channel MOSFET,IRLD110 1A 100V

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.3 W

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Width

6.29mm

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Minimum Operating Temperature

-55 °C

Length

5mm

Maximum Operating Temperature

+175 °C

Height

3.37mm