N-Channel MOSFET, 258 A, 40 V, 8-Pin LFPAK ON Semiconductor NTMYS1D2N04CLTWG

Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

258 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

134 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Height

1.2mm

Width

4.9mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

109 nC @ 10 V