SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 ON Semiconductor NTHL080N120SC1

Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

162 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

348 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +20 V

Number of Elements per Chip

1

Forward Diode Voltage

4V

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

15.87mm

Typical Gate Charge @ Vgs

56 nC @ 20 V

Height

20.82mm

Width

4.82mm

Minimum Operating Temperature

-55 °C