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N-Channel MOSFET, 33.7 A, 80 V, 8-Pin PowerPAK 1212 Vishay SiS128LDN-T1-GE3

RS Stock No. 188-5153
Brand Vishay
Manufacturers Part No. SiS128LDN-T1-GE3

Temporarily out of stock

Temporarily out of stock

$ 0.792

Each (In a Pack of 10)

N-Channel MOSFET, 33.7 A, 80 V, 8-Pin PowerPAK 1212 Vishay SiS128LDN-T1-GE3

Buy in bulk

quantityUnit price
10 - 40$ 0.792
50 - 90$ 0.776
100 - 490$ 0.600
500 - 990$ 0.498
1000+$ 0.397

Production pack (Reel)

Live stock

Temporarily out of stock

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

33.7 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Height

1.07mm

Width

3.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Maximum Operating Temperature

+150 °C

Length

3.15mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Technical Document

RoHS Certificate of Compliance

Statement of Conformity