P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-S Vishay SiSS61DN-T1-GE3
Temporarily out of stock
$ 0.858
Each (In a Pack of 10)
Buy in bulk
| quantity | Unit price |
|---|---|
| 10 - 40 | $ 0.858 |
| 50 - 90 | $ 0.841 |
| 100 - 490 | $ 0.657 |
| 500 - 990 | $ 0.567 |
| 1000+ | $ 0.447 |
Production pack (Reel)
Live stock
Temporarily out of stock
Specifications
Brand
Vishay
Channel Type
P
Maximum Continuous Drain Current
111.9 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
65.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Height
0.78mm
Width
3.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Maximum Operating Temperature
+150 °C
Length
3.3mm
Typical Gate Charge @ Vgs
154 nC @ 10 V
Technical Document
RoHS Certificate of Compliance
Statement of Conformity