N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-S Vishay SISS60DN-T1-GE3
RS Stock No. 188-5094
Brand Vishay
Manufacturers Part No. SISS60DN-T1-GE3
5980 in stock in the UK
5980 in stock in the UK
$ 1.245
Each (In a Pack of 10)
N-Channel MOSFET, 181.8 A, 30 V, 8-Pin PowerPAK 1212-S Vishay SISS60DN-T1-GE3
Buy in bulk
| quantity | Unit price |
|---|---|
| 10 - 40 | $ 1.245 |
| 50 - 90 | $ 1.222 |
| 100 - 490 | $ 0.957 |
| 500 - 990 | $ 0.824 |
| 1000+ | $ 0.650 |
Production pack (Reel)
Live stock
5980 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
181.8 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.01 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
65.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Number of Elements per Chip
1
Height
0.78mm
Width
3.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.68V
Maximum Operating Temperature
+150 °C
Length
3.3mm
Typical Gate Charge @ Vgs
57 nC @ 10 V