N-Channel MOSFET, 55.5 A, 80 V, 8-Pin PowerPAK 1212-S Vishay SISS30LDN-T1-GE3
Temporarily out of stock
$ 1.096
Each (In a Pack of 10)
Buy in bulk
| quantity | Unit price |
|---|---|
| 10 - 40 | $ 1.096 |
| 50 - 90 | $ 1.074 |
| 100 - 490 | $ 0.842 |
| 500 - 990 | $ 0.722 |
| 1000+ | $ 0.569 |
Production pack (Reel)
Live stock
Temporarily out of stock
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
55.5 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK 1212-S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Height
0.78mm
Width
3.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Maximum Operating Temperature
+150 °C
Length
3.3mm
Typical Gate Charge @ Vgs
32.5 nC @ 10 V
Technical Document
RoHS Certificate of Compliance
Statement of Conformity