Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3
RS Stock No. 188-5029
Brand Vishay
Manufacturers Part No. SQ1922AEEH-T1_GE3
2675 in stock in the UK
2675 in stock in the UK
$ 0.365
Each (In a Pack of 25)
Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3
Buy in bulk
| quantity | Unit price |
|---|---|
| 25 - 25 | $ 0.365 |
| 50 - 75 | $ 0.359 |
| 100 - 475 | $ 0.247 |
| 500 - 975 | $ 0.197 |
| 1000+ | $ 0.160 |
Production pack (Reel)
Live stock
2675 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
530 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
1.5 W
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
2
Height
1mm
Width
1.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Maximum Operating Temperature
+175 °C
Automotive Standard
AEC-Q101
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 10 V