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P-Channel MOSFET, 108 A, 30 V, 8-Pin PowerPAK 1212-S Vishay SiSS05DN-T1-GE3

RS Stock No. 188-5013
Brand Vishay
Manufacturers Part No. SiSS05DN-T1-GE3

Temporarily out of stock

Temporarily out of stock

$ 1.045

Each (In a Pack of 10)

P-Channel MOSFET, 108 A, 30 V, 8-Pin PowerPAK 1212-S Vishay SiSS05DN-T1-GE3

Buy in bulk

quantityUnit price
10 - 40$ 1.045
50 - 90$ 1.026
100 - 490$ 0.807
500 - 990$ 0.690
1000+$ 0.595

Production pack (Reel)

Live stock

Temporarily out of stock

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

108 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +16 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

76 nC @ 10 V

Forward Diode Voltage

1.1V

Maximum Operating Temperature

+150 °C

Length

3.3mm

Height

0.78mm

Width

3.3mm

Minimum Operating Temperature

-55 °C

Technical Document

RoHS Certificate of Compliance

Statement of Conformity

Datasheet SiSS05DN-T1-GE3