N-Channel MOSFET, 19 A, 600 V, 3-Pin D2PAK Vishay SIHB22N60EF-GE3
RS Stock No. 188-4976
Brand Vishay
Manufacturers Part No. SIHB22N60EF-GE3
990 in stock in the UK
990 in stock in the UK
$ 3.461
Each (In a Pack of 5)
N-Channel MOSFET, 19 A, 600 V, 3-Pin D2PAK Vishay SIHB22N60EF-GE3
Buy in bulk
| quantity | Unit price |
|---|---|
| 5 - 5 | $ 3.461 |
| 10 - 20 | $ 2.677 |
| 25+ | $ 2.632 |
Production pack (Tube)
Live stock
990 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
600 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
182 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
179 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Maximum Operating Temperature
+150 °C
Length
10.41mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Height
4.57mm
Width
9.65mm