N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3
RS Stock No. 188-4943
Brand Vishay
Manufacturers Part No. SIHU4N80AE-GE3
5915 in stock in the UK
5915 in stock in the UK
$ 1.571
Each (In a Pack of 5)
N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3
Buy in bulk
| quantity | Unit price |
|---|---|
| 5 - 5 | $ 1.571 |
| 10 - 20 | $ 1.284 |
| 25 - 45 | $ 1.257 |
| 50+ | $ 1.230 |
Production pack (Tube)
Live stock
5915 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.44 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Height
6.22mm
Forward Diode Voltage
1.2V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Width
2.38mm
Minimum Operating Temperature
-55 °C