3 N/P-Channel MOSFET, 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A, 200 (Channel 3) V, 40 (Channel 1) V, 40

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A

Maximum Drain Source Voltage

200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V

Package Type

Triple Die

Mounting Type

Surface Mount

Pin Count

10

Maximum Drain Source Resistance

0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V

Minimum Gate Threshold Voltage

1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V

Maximum Power Dissipation

48 W, 48 W, 60 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

3

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Typical Gate Charge @ Vgs

14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1)