Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

530 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±12 V

Number of Elements per Chip

2

Height

1mm

Width

1.35mm

Minimum Operating Temperature

-55 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 10 V

Forward Diode Voltage

1.2V

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101