N-Channel MOSFET, 178.3 A, 30 V, 8-Pin PowerPAK 1212-S Vishay SiSS66DN-T1-GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

178.3 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

65.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Height

0.78mm

Width

3.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.68V

Maximum Operating Temperature

+150 °C

Length

3.3mm

Typical Gate Charge @ Vgs

57 nC @ 10 V