N-Channel MOSFET, 55.5 A, 80 V, 8-Pin PowerPAK 1212-S Vishay SISS30LDN-T1-GE3
RS Stock No. 188-4902
Brand Vishay
Manufacturers Part No. SISS30LDN-T1-GE3
12000 in stock in the UK
12000 in stock in the UK
$ 0.540
Each (On a Reel of 3000)
N-Channel MOSFET, 55.5 A, 80 V, 8-Pin PowerPAK 1212-S Vishay SISS30LDN-T1-GE3
Live stock
12000 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
55.5 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK 1212-S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Height
0.78mm
Width
3.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Maximum Operating Temperature
+150 °C
Length
3.3mm
Typical Gate Charge @ Vgs
32.5 nC @ 10 V