N-Channel MOSFET, 81.2 A, 60 V, 8-Pin PowerPAK 1212-S Vishay SISS26LDN-T1-GE3
RS Stock No. 188-4901
Brand Vishay
Manufacturers Part No. SISS26LDN-T1-GE3
3000 in stock in the UK
3000 in stock in the UK
$ 0.538
Each (On a Reel of 3000)
N-Channel MOSFET, 81.2 A, 60 V, 8-Pin PowerPAK 1212-S Vishay SISS26LDN-T1-GE3
Live stock
3000 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
81.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK 1212-S
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Maximum Operating Temperature
+150 °C
Length
3.3mm
Typical Gate Charge @ Vgs
31.5 nC @ 10 V
Height
0.78mm
Width
3.3mm