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N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH Vishay SISHA10DN-T1-GE3

RS Stock No. 188-4897
Brand Vishay
Manufacturers Part No. SISHA10DN-T1-GE3

3000 in stock in the UK

3000 in stock in the UK

$ 0.350

Each (On a Reel of 3000)

N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-SH Vishay SISHA10DN-T1-GE3

Buy in bulk

quantityUnit price
3000 - 3000$ 0.350
6000+$ 0.338

Live stock

3000 in stock in the UK

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Width

3.3mm

Minimum Operating Temperature

-55 °C

Height

0.93mm

Forward Diode Voltage

1.2V

Maximum Operating Temperature

+150 °C

Length

3.3mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Technical Document

RoHS Certificate of Compliance

Statement of Conformity

Datasheet SISHA10DN-T1-GE3

Datasheet SISHA10DN-T1-GE3