N-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-SH Vishay SiSH114ADN-T1-GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-SH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Height

0.93mm

Width

3.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Maximum Operating Temperature

+150 °C

Length

3.3mm

Typical Gate Charge @ Vgs

21 nC @ 10 V