Dual N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-SCD Vishay SiSF20DN-T1-GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-SCD

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

69.4 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

3.4mm

Minimum Operating Temperature

-55 °C

Height

0.75mm