N-Channel MOSFET, 33.7 A, 80 V, 8-Pin PowerPAK 1212 Vishay SiS128LDN-T1-GE3
RS Stock No. 188-4888
Brand Vishay
Manufacturers Part No. SiS128LDN-T1-GE3
3000 in stock in the UK
3000 in stock in the UK
$ 0.356
Each (On a Reel of 3000)
N-Channel MOSFET, 33.7 A, 80 V, 8-Pin PowerPAK 1212 Vishay SiS128LDN-T1-GE3
Live stock
3000 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
33.7 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK 1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Height
1.07mm
Width
3.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
20 nC @ 10 V