N-Channel MOSFET, 16 A, 80 V, 8-Pin PowerPAK 1212 Vishay SIS108DN-T1-GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Height

1.07mm

Width

3.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Maximum Operating Temperature

+150 °C

Length

3.15mm

Typical Gate Charge @ Vgs

9.2 nC @ 10 V