N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3
RS Stock No. 188-4879
Brand Vishay
Manufacturers Part No. SIHU4N80AE-GE3
5850 in stock in the UK
5850 in stock in the UK
$ 1.341
Each (In a Tube of 75)
N-Channel MOSFET, 4.1 A, 800 V, 3-Pin IPAK Vishay SIHU4N80AE-GE3
Buy in bulk
| quantity | Unit price |
|---|---|
| 75 - 75 | $ 1.341 |
| 150 - 450 | $ 1.023 |
| 525 - 975 | $ 0.888 |
| 1050 - 2475 | $ 0.701 |
| 2550+ | $ 0.661 |
Live stock
5850 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.44 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
6.22mm
Width
2.38mm
Minimum Operating Temperature
-55 °C