N-Channel MOSFET, 2.9 A, 800 V, 3-Pin DPAK Vishay SIHD2N80AE-GE3
RS Stock No. 188-4874
Brand Vishay
Manufacturers Part No. SIHD2N80AE-GE3
2000 in stock in the UK
2000 in stock in the UK
$ 0.516
Each (On a Reel of 2000)
N-Channel MOSFET, 2.9 A, 800 V, 3-Pin DPAK Vishay SIHD2N80AE-GE3
Buy in bulk
| quantity | Unit price |
|---|---|
| 2000 - 2000 | $ 0.516 |
| 4000+ | $ 0.485 |
Live stock
2000 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
800 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Height
2.25mm
Width
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
7 nC @ 10 V