N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK Vishay SIHD186N60EF-GE3
RS Stock No. 188-4873
Brand Vishay
Manufacturers Part No. SIHD186N60EF-GE3
2985 in stock in the UK
2985 in stock in the UK
$ 1.598
Each (On a Reel of 2000)
N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK Vishay SIHD186N60EF-GE3
Live stock
2985 in stock in the UK
Specifications
Brand
Vishay
Channel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
201 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Height
2.25mm
Width
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
21 nC @ 10 V