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N-Channel MOSFET, 19 A, 600 V, 3-Pin D2PAK Vishay SIHB22N60EF-GE3

RS Stock No. 188-4872
Brand Vishay
Manufacturers Part No. SIHB22N60EF-GE3

950 in stock in the UK

950 in stock in the UK

$ 2.966

Each (In a Tube of 50)

N-Channel MOSFET, 19 A, 600 V, 3-Pin D2PAK Vishay SIHB22N60EF-GE3

Buy in bulk

quantityUnit price
50 - 50$ 2.966
100 - 200$ 2.441
250 - 450$ 2.375
500 - 950$ 2.127
1000+$ 1.854

Live stock

950 in stock in the UK

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

182 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

179 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Height

4.57mm

Width

9.65mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Maximum Operating Temperature

+150 °C

Length

10.41mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Technical Document

RoHS Certificate of Compliance

Statement of Conformity

Datasheet SIHB22N60EF-GE3

Datasheet SIHB22N60EF-GE3