N-Channel MOSFET, 208 A, 45 V, 8-Pin PowerPAK SO Vishay SIDR608DP-T1-RE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

208 A

Maximum Drain Source Voltage

45 V

Package Type

PowerPAK SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Width

5mm

Forward Diode Voltage

1.1V

Length

5.99mm

Maximum Operating Temperature

+150 °C

Height

1.07mm

Typical Gate Charge @ Vgs

111 nC @ 10 V

Minimum Operating Temperature

-55 °C