Dual N-Channel MOSFET, 164 (Q2) A, 70 (Q1) A, 30 V, 8-Pin PGFN ON Semiconductor FDMS1D2N03DSD
Temporarily out of stock
$ 2.589
Each (In a Pack of 4)
Buy in bulk
| quantity | Unit price |
|---|---|
| 4 - 8 | $ 2.589 |
| 12 - 96 | $ 2.195 |
| 100 - 248 | $ 1.709 |
| 252 - 496 | $ 1.652 |
| 500+ | $ 1.450 |
Production pack (Reel)
Live stock
Temporarily out of stock
Specifications
Brand
ON Semiconductor
Channel Type
N
Maximum Continuous Drain Current
164 (Q2) A, 70 (Q1) A
Maximum Drain Source Voltage
30 V
Package Type
PGFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5 (Q1) V, 3 (Q2) V
Minimum Gate Threshold Voltage
0.8 (Q1) V, 1 (Q2) V
Maximum Power Dissipation
26 W, 42 W
Maximum Gate Source Voltage
+16/-12 (Q1, Q2) V
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
23 (Q1) nC @ 10 V, 84 (Q2) nC @ 10 V
Forward Diode Voltage
1.2V
Maximum Operating Temperature
+150 °C
Length
5.1mm
Height
0.75mm
Width
6.15mm
Minimum Operating Temperature
-55 °C
Country of Origin
PH
Technical Document
Statement of Conformity