N-Channel MOSFET, 558 A, 40 V, 8-Pin DFNW ON Semiconductor NVMTS0D4N04CTXG

Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

558 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

450 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

244 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Height

1.15mm

Width

8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Length

8.1mm

Typical Gate Charge @ Vgs

251 nC @ 10 V

Country of Origin

PH