Dual N-Channel MOSFET, 164 (Q2) A, 70 (Q1) A, 30 V, 8-Pin PGFN ON Semiconductor FDMS1D2N03DSD

Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

164 (Q2) A, 70 (Q1) A

Maximum Drain Source Voltage

30 V

Package Type

PGFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (Q1) V, 3 (Q2) V

Minimum Gate Threshold Voltage

0.8 (Q1) V, 1 (Q2) V

Maximum Power Dissipation

26 W, 42 W

Maximum Gate Source Voltage

+16/-12 (Q1, Q2) V

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Maximum Operating Temperature

+150 °C

Length

5.1mm

Typical Gate Charge @ Vgs

23 (Q1) nC @ 10 V, 84 (Q2) nC @ 10 V

Height

0.75mm

Width

6.15mm

Country of Origin

PH